Methods and Systems for Making Piezoelectric Cantilever Actuators

ABSTRACT

A method of fabricating a microelectronic device comprising providing a substrate comprising a first bottom surface, providing a mold comprising a first top surface with first projections, and punching the first projections through the first bottom surface to define anchors, pre-cantilevers, and cavities in the substrate. A piezoelectric cantilever actuator system array prepared by a process comprising the steps of providing a substrate comprising a first bottom surface, providing a mold comprising a first top surface with first projections, and punching the first projections through the first bottom surface to define anchors, pre-cantilevers, and cavities in the substrate. A microelectronic device comprising a base, a first anchor coupled to the base, and a first cantilever coupled to the first anchor, wherein the base, the first anchor, and the first cantilever are an integral structure formed from the same substrate material.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a non-provisional of and claims priority toU.S. Provisional Patent Application No. 62/260,982 filed Nov. 30, 2015and entitled “Methods and Systems for Making Piezoelectric CantileverActuators,” which application is incorporated by reference herein in itsentirety.

TECHNICAL FIELD

The present disclosure relates to microelectronics fabrication, morespecifically to processes for fabricating piezoelectric cantileveractuators.

BACKGROUND

Electronic devices interact, or communicate, with users of the devicesby receiving input from the users and providing output to the users.Conventional forms of input include keyboards, mice, and touchscreens.Conventional forms of output include digital displays, toggle lights,and liquid crystal displays (LCDs).

Haptic communication refers to interaction with users by recreating thesense of touch by applying forces, vibrations, or motions to the users.For instance, some smartphones include rotating mass motors that vibratewhen users touch screens on the smartphones or when users receivenotifications of incoming calls, text messages, or emails. However,those motors cannot localize vibrations to any particular locations ofthe smartphones. Furthermore, the motors are large and limit thephysical dimensions of smartphones. Additionally, the motors consumesignificant power, particularly in comparison to their functionalbenefit and to other components in the smartphones.

Capacitive sensing refers to interaction with users based on the bodycapacitance of users. For instance, when users touch a smartphonetouchscreen, sensors underneath the touchscreen detect changes incapacitance from the touch. A processor then correlates the changes incapacitance to locations of the touchscreen. However, capacitive sensingis not able to quantify the pressure from touch. Moreover, capacitivesensors do not combine well with haptic motors because the sensors andmotors must be separated physically and because the motors cannotlocalize vibrations to where the sensors sense touch. Thus, capacitivesensing input cannot correlate well to haptic vibration output.

BRIEF SUMMARY

Disclosed herein is a method of fabricating a microelectronic devicecomprising providing a substrate comprising a first bottom surface,providing a mold comprising a first top surface with first projections,and punching the first projections through the first bottom surface todefine anchors, pre-cantilevers, and cavities in the substrate.

Also disclosed herein is a piezoelectric cantilever actuator systemarray prepared by a process comprising the steps of providing asubstrate comprising a first bottom surface, providing a mold comprisinga first top surface with first projections, and punching the firstprojections through the first bottom surface to define anchors,pre-cantilevers, and cavities in the substrate.

Further disclosed herein is a microelectronic device comprising a base,a first anchor coupled to the base, and a first cantilever coupled tothe first anchor, wherein the base, the first anchor, and the firstcantilever are an integral structure formed from the same substratematerial.

BRIEF DESCRIPTION OF THE DRAWINGS

For a detailed description of the preferred embodiments of the disclosedmethods, reference will now be made to the accompanying drawings inwhich:

FIG. 1A is a side view of a schematic diagram of a piezoelectriccantilever actuator.

FIG. 1B is a perspective view of a schematic diagram of thepiezoelectric cantilever actuator in FIG. 1A.

FIG. 2A is a side view of a substrate and a mold.

FIG. 2B is a top view of the substrate and the mold in FIG. 2A.

FIG. 2C is a perspective view of the substrate and the mold in FIGS. 2Aand 2B.

FIG. 3A is a side view of a molded substrate after the molding in FIG.2C

FIG. 3B is a transparent top view of the molded substrate in FIG. 3A.

FIG. 3C is a transparent perspective view of the molded substrate inFIGS. 3A and 3B.

FIG. 4A is a perspective view of a substrate system.

FIG. 4B is a perspective view of the substrate system in FIG. 4A afterpatterning of the bottom electrode layer.

FIG. 4C is a perspective view of the substrate system in FIG. 4B afterdeposition and patterning of a dielectric layer.

FIG. 4D is a perspective view of the substrate system in FIG. 4C afterdeposition of a piezoelectric layer on the top side of the substrate.

FIG. 4E is a perspective view of the substrate system in FIG. 4D afterdeposition of a semiconductor layer on top of the piezoelectric layer.

FIG. 4F is a perspective view of the substrate system in FIG. 4E afterpatterning of the semiconductor layer.

FIG. 4G is a perspective view of the substrate system in FIG. 4F afterdeposition of a top electrode layer on top of the piezoelectric layerand the TFT semiconductor layers.

FIG. 4H is a perspective view of the substrate system in FIG. 4G afterpatterning of the top electrode layer.

FIG. 4I is a perspective view of the substrate system in FIG. 4H afteretching or removal of the piezoelectric layer.

FIG. 5A is a side view of the substrate system in FIG. 4I.

FIG. 5B is a transparent top view of the substrate system in FIG. 5A.

FIG. 5C is a transparent perspective view of the substrate system inFIGS. 5A and 5B.

FIG. 6A is a side view of a cutter and the substrate system in FIGS.5A-5C.

FIG. 6B is a transparent top view of the cutter and the substrate systemin FIG. 6A.

FIG. 6C is a transparent bottom view of the cutter and the substratesystem in FIGS. 6A and 6B.

FIG. 7A is a side view of a schematic diagram of a stamped substratesystem after the stamping in FIGS. 6B and 6C.

FIG. 7B is a top view of a schematic diagram of the stamped substratesystem in FIG. 7A.

FIG. 7C is a perspective view of a schematic diagram of the stampedsubstrate system in FIGS. 7A and 7B.

FIG. 8 is a flowchart of a method for fabricating a system.

DETAILED DESCRIPTION

Disclosed herein are microelectronic manufacturing methods, techniques,and systems. While any number and variety of microelectronics may beprepared using the methods, techniques, and systems described herein,for ease of reference the specification will focus on piezoelectriccantilever actuators and techniques for fabricating those actuators. Theactuators comprise a base, a first anchor coupled to the base, and afirst cantilever coupled to the first anchor, wherein the base, thefirst anchor, and the first cantilever are part of the same substrate.Fabrication of the actuators comprises providing a substrate comprisinga first bottom surface, providing a mold comprising a first top surfacewith first projections, and punching the first projections through thefirst bottom surface to define anchors, pre-cantilevers, and cavities inthe substrate. Fabrication of the actuators further comprises providinga cutter with a second bottom surface with second projections, andstamping a second top surface of the substrate to release thepre-cantilevers and define cantilevers and recess areas. Optionally,fabrication of the actuators further comprises fabricating additionalcircuitry on top of the pre-cantilevers prior to and/or after any of theproviding the substrate, the providing the mold, and the punching.

Other than in the operating examples or where otherwise indicated, allnumbers or expressions referring to quantities of ingredients, reactionconditions, and the like, used in the specification and claims are to beunderstood as modified in all instances by the term “about.” Variousnumerical ranges are disclosed herein. Because these ranges arecontinuous, they include every value between the minimum and maximumvalues. The endpoints of all ranges reciting the same characteristic orcomponent are independently combinable and inclusive of the recitedendpoint. Unless expressly indicated otherwise, the various numericalranges specified in this application are approximations. The endpointsof all ranges directed to the same component or property are inclusiveof the endpoint and independently combinable. The term “from more than 0to an amount” means that the named component is present in some amountmore than 0, and up to and including the higher named amount.

The terms “a,” “an,” and “the” do not denote a limitation of quantity,but rather denote the presence of at least one of the referenced item.As used herein the singular forms “a,” “an,” and “the” include pluralreferents.

As used herein, “combinations thereof” is inclusive of one or more ofthe recited elements, optionally together with a like element notrecited, e.g., inclusive of a combination of one or more of the namedcomponents, optionally with one or more other components notspecifically named that have essentially the same function. As usedherein, the term “combination” is inclusive of blends, mixtures, alloys,reaction products, and the like.

Reference throughout the specification to “an embodiment,” “anotherembodiment,” “other embodiments,” “some embodiments,” and so forth,means that a particular element (e.g., feature, structure, property,and/or characteristic) described in connection with the embodiment isincluded in at least an embodiment described herein, and may or may notbe present in other embodiments. In addition, it is to be understoodthat the described element(s) can be combined in any suitable manner inthe various embodiments.

As used herein, the terms “inhibiting” or “reducing” or “preventing” or“avoiding” or any variation of these terms, include any measurabledecrease or complete inhibition to achieve a desired result.

As used herein, the term “effective,” means adequate to accomplish adesired, expected, or intended result.

As used herein, the terms “comprising” (and any form of comprising, suchas “comprise” and “comprises”), “having” (and any form of having, suchas “have” and “has”), “including” (and any form of including, such as“include” and “includes”) or “containing” (and any form of containing,such as “contain” and “contains”) are inclusive or open-ended and do notexclude additional, unrecited elements or method steps.

As used herein, the term “thermoplastic” refers to a plastic orpolymeric material capable of undergoing plastic deformation under theconditions described herein, examples including polyethyleneterephthalate (PET), polyester, polyolefin (e.g., polyethylene,polypropylene, etc.), polycarbonate, polyacetal, polyacrylates,polyacrylonitrile, polyamide, polyamide-imide, polyaryletherketone,polybutadiene, polybutylene, polybutylene terephthalate,polychlorotrifluoroethylene, polycyclohexylene dimethyleneterephthalate, polyhydroxyalkanoates, polyketone, polyethylene,polyethereetherketone, polyetherimide, polyetheresulfone,polyethylenechlorinate, polyimide, polylactic acid, polymethylpentene,polyphenylene oxide, polyphenylene sulfide, polyphthalamide,polypropylene, polysulfone, polyvinyl chloride, polyvinylidene chloride,acrylonitrile butadiene styrene, celluloid, cellulose acetate, ethylenevinyl acetate, ethylene vinyl alcohol, fluoroplastics, ionomers, andcombinations thereof.

Unless defined otherwise, technical and scientific terms used hereinhave the same meaning as is commonly understood by one of skill in theart.

FIG. 1A is a side view of a schematic diagram of a piezoelectriccantilever actuator 100. Piezoelectric is the property of converting amechanical force to an electric charge. A cantilever is a longprojecting beam fixed at only one end. In this context, an actuator is adevice that converts electrical charge to mechanical force. The actuator100 comprises a substrate 105, an anchor 110, and a cantilever 115.

The substrate 105 comprises a material such as plastic suitable forproviding support for the actuator 100 in general during fabrication andthe anchor 110 in particular after fabrication. The anchor 110 comprisesa material suitable for providing support for the cantilever 115. Theanchor further provides a gap 140 for the cantilever 115 to move up anddown.

The cantilever 115 comprises a base layer 120, a bottom electrode 125, apiezoelectric layer 130, and a top electrode 135. The base layer 120comprises a material suitable for providing support for the bottomelectrode 125, the piezoelectric layer 130, and the top electrode 135.The substrate 105, the anchor 110, and the base layer 120 may comprisesimilar materials. For example the substrate 105, the anchor 110, andthe base layer 120 may comprise the same material and may be anintegral, unitary, continuous structure formed from a common substratematerial as described in more detail herein. The bottom electrode 125and the top electrode 135 comprise a material suitable for electricalconductivity. The piezoelectric layer 130 comprises a piezoelectricmaterial suitable for converting a mechanical force to an electriccharge and for passing that electric charge on to the bottom electrode125 and the top electrode 135.

The actuator 100 provides two functions. First, a voltage may be appliedto the bottom electrode 125 and the top electrode 135 to cause thecantilever 115 to move up, move down, or vibrate. Thus, the actuatorsmay provide feedback. Second, a mechanical force may be applied to thecantilever 115. The piezoelectric layer 130 converts that mechanicalforce to an electric charge, which shifts a threshold voltage of athin-film transistor (TFT) so that the TFT detects the electric charge.Thus, the actuators may provide sensing responsive to force such as auser's touch. The functions and applications of a piezoelectriccantilever actuator such as the actuator 100 are described further inU.S. provisional patent application No. 62/185,506 titled “IntegratedPiezoelectric Cantilever Actuator and Transistor for Touch Input andHaptic Feedback Applications” and filed Jun. 26, 2015 by Jesus AlfonsoCaraveo Frescas, et al., which is incorporated herein by reference inits entirety.

FIG. 1B is a perspective view of a schematic diagram of thepiezoelectric cantilever actuator 100 in FIG. 1A. FIG. 1B highlights thesubstrate 105, the anchor 110, and the top electrode 135. In addition,FIG. 1B shows a length 145 and a width 150 of the actuator 100. Asshown, the length 145 may be substantially longer than the width 150 inorder to accommodate the shape of the cantilever 115.

Heretofore, at least three techniques may be used to fabricate theactuator 100. A first technique uses microfabrication processes. First,the anchor 110, the cantilever 115, and additional materials (e.g.,electrode material, piezoelectric material, optional circuitry, and thelike) are fabricated on the substrate 105 using photolithographydeposition and patterning techniques such as physical vapor deposition,chemical vapor deposition, electroplating, wet etching, plasma dryetching, reactive ion etching, or another suitable process describedbelow and in U.S. Pat. No. 7,253,488 titled “Piezo-TFT Cantilever MEMS”and filed Jan. 5, 2005 by Changqing Zhan, et al., which is incorporatedby reference. The substrate 105 is a flat, continuous surface such as asilicon wafer. The materials are deposited and patterned with a suitablegeometry that guarantees the integrity of the anchor 110 and thecantilever 115 at the end of fabrication. Second, the gap 140 is createdby selective removal of the substrate 105

A photolithography technique patterns parts of a thin film or the bulkof the substrate 105 and uses light to transfer a geometric pattern froma photomask to a light-sensitive chemical photoresist on the substrate105. A series of chemical treatments then either engraves the exposurepattern in, or enables deposition of a new material in the desiredpattern on, the material underneath the photoresist exposure pattern.Physical vapor deposition uses vacuum deposition to deposit thin filmsby the condensation of a vaporized form of the desired film materialonto various surfaces. Chemical vapor deposition is a chemical processthat produces high-quality, high-performance solid materials.Electroplating uses electric current to reduce dissolved metal cationsso that they form a coherent metal coating on an electrode. Wet etchingchemically removes layers from the surface of the substrate 105. Plasmadry etching removes material by exposing the material to ions thatdislodge portions of the material from the exposed surface. The ions maybe a plasma of reactive gases such as fluorocarbons, oxygen, chlorine,boron tri-chloride, nitrogen, argon, helium, and other gases.

However, the etching step includes several sub-steps. In addition, it isdifficult to selectively remove the substrate 105 only under thecantilever 115 without also removing the components of the cantilever115, particularly because organic materials used for the piezoelectriclayer 130 and other components of the cantilever 115 may have poorchemical resistance to etchants. Furthermore, the technique may requirethat the substrate 105 comprise rigid materials like silicon and glass.Moreover, the technique requires toxic etchants, sophisticated tools,and energy-intensive processes.

A second technique cuts and transfers the cantilever 115. First, thecantilever 115 and additional circuitry are fabricated on an initialsubstrate. Second, the cantilever 115 and additional circuitry are, oran array comprising multiple such cantilevers 115 and additionalcircuitries is, mechanically cut from the initial substrate. Third, thecantilever 115 and additional circuitry are transferred and glued to theanchor 110 on the substrate 105. The substrate 105 and the anchor 110must comprise the appropriate geometry to properly match to thecantilever 115 and additional circuitry. This technique can includeblade pressing and clamping, laser micromachining, punching, or anothersuitable process described below and in “Organic microcantileversfabrication based on a technique adapted from flip chip for biosensingapplication” by L. Fadel-Taris, et al., which is incorporated byreference.

Blade pressing and clamping uses shearing, which cuts material withoutchipping, using burning, or using melting. Specifically, two sharpblades are joined together, and two additional sharp blades are joinedperpendicular to the first two. The blade arrangement is then pressed onboth the substrate 105 and the remaining components to form thecantilever 115. Laser micromachining uses a laser on the substrate 105and the remaining components to pattern the cantilever 115. Punchinguses shear forces to change the substrate 105 and the remainingcomponents from a flat surface to a shaped surface and to therefore formthe cantilever 115.

However, the separate fabrication of the substrate 105 and thecantilever 115 is a wasteful process, compromises accuracy, compromisesthe rigidity of the anchor 110, and is not suitable for micrometer-sizedactuators like the actuator 100. For example, the substrate 105, theanchor 110, and the base layer 120 may be formed of different materials(each having different thermal and/or mechanical properties) and may bea non-integral, non-unitary, and discontinuous structure defined by oneor more material and/or structural boundaries between the substrate 105,the anchor 110, and the base layer 120. The separate fabrication isnecessary because fabrication techniques do not permit the substrate 105to be mechanically flexible as required for the cantilever 115. Inaddition, the technique precludes actuators 100 with surface spread andprovides low yield because the actuators 100 are damaged during thetransferring and gluing steps. Furthermore, if the actuator 100 iscombined with additional circuitry, the fabrication steps of thecantilever 115 have to be compatible with the fabrication steps of thewhole actuator 100. Additional circuitry may include TFTs for sensingtouch, force, pressure, vibration, and temperature. Fabricating the TFTson a flexible substrate may require that the substrate 105 have asurface roughness below 20 nanometers (nm) and have no holes or defectsin it, so the creation of the gap 140, and thus release of thecantilever 115, may have to be completed at the end of the fabrication.For those reasons, the second technique may require several differenttypes of materials, thus making chemical compatibility a challenge.Moreover, the cutting and gluing process may compromise the integrity ofthe additional circuitry.

A third technique uses microinjection molding. First, the substrate 105is formed to already comprise the shape of the cantilever 115. Second,the components of the cantilever 115 are injected into the cantilever115. However, because the substrate 105 already comprises the shape ofthe cantilever 115 and is therefore a non-smooth, non-continuous (i.e.,discontinuous), non-uniform surface, it is difficult to deposit andpattern components around that shape. Furthermore, the deposition of theadditional circuitry requires a flat, continuous surface with no holesor other defects, which is not possible using this technique.

Disclosed herein are embodiments for improved fabrication ofpiezoelectric cantilever actuators. Specifically, the disclosedfabrication includes fabrication of both cantilevers and additionalcircuitry such as TFTs on the same substrate. Thus, there is no need forcutting the cantilevers from one substrate and transferring and gluingthe cantilevers to another substrate. Patterning provides both anchorsand gaps between the substrate and the cantilevers without compromisingthe integrity of the surfaces, including the top surfaces of thecantilevers on which the additional circuitry is fabricated. At the endof fabrication, recess areas around the cantilevers are cut in order torelease the cantilevers. The recess areas may be cut in a u-shaped toform a free cantilever (e.g., having cuts along the two longitudinalsides of the cantilever arm and at the end opposite the base) capable ofup or down movement. The fabrication uses physical processes that do notrequire chemical etchants, so the fabrication is compatible with organicpiezoelectric materials. The fabrication is suitable for fabricatingactuators at least in the micrometer (μm) to millimeter (mm) range. Theintegration of the actuators and the TFTs may provide for a hapticfeedback system incorporating touch, force, pressure, vibration, andtemperature sensing.

FIGS. 2A-7C show the disclosed fabrication in three primary steps. FIGS.2A-3C show the first primary step of molding to form one or morecavities in the substrate, wherein the cavities correspond to one ormore void spaces in a microelectronic device such as a piezoelectriccantilever actuator. FIGS. 4A-4I show the second primary step ofelectronics fabrication of the microelectronic device. FIGS. 5A-7C showthe third primary step of releasing all or a portion of themicroelectronic device (e.g., a cantilever) from the substrate.

FIG. 2A is a side view of a substrate 200 and a mold 250. The substrate200 comprises a left side 205 and a right side opposite the left side.The left side 205 is substantially uniform and flat. The right side isopposite from, parallel to, and similar to the left side 205. Thesubstrate 200 further comprises thermoplastic or other suitablematerials. Preferably, the substrate 200 is flexible to allow movementof cantilevers, which are described below; transparent for use as, forinstance, a smartphone touchscreen; able to be plastically deformed toallow for cavities, which are described below; and able to maintain itsstructure after a desired point such as after molding or aftercompletion of fabrication, which are described below. In an embodiment,the substrate comprises polycarbonate, poly(methyl methacrylate), orother transparent thermoplastics.

The mold 250 may also be referred to as a puncher or an imprinter. Themold 250 comprises one or more projections 255 and a base 265. Theprojections 255 may be any suitable size and shape corresponding thedesired dimensions of a microelectronic device having one or more voidspaces such as a piezoelectric cantilever actuator. For example theprojections 255 are substantially rectangular and have heights 260suitable for cantilevers to move up and down while maintainingstructural integrity. In various embodiments, the height 260 of theprojections is less than the thickness of the substrate 200, for exampleequal to or less than about 90, 80, 70, 60 or 50% of the thickness ofthe substrate. The base 265 has a height 270 suitable for supporting thecantilevers and additional circuitry, the latter of which is alsodescribed below. The size of the mold 250 may be any size suitable foraccommodating a desired number of projections 255 and thus a desirednumber of cantilevers. The mold 250 further comprises metal or othersuitable materials. For instance, the mold 250 may be stainless steel.

FIG. 2B is a top view of the substrate 200 and the mold 250 in FIG. 2A.The substrate 200 comprises a top side 210 and a bottom side oppositethe top side. The top side 210 is substantially uniform, continuous,flat, and defect free in order to provide for fabrication of theadditional circuitry. The bottom side is opposite from, parallel to, andsimilar to the top side 210. As shown, the substrate 200, the mold 250,and the projections 255 are substantially rectangular. Alternatively,the substrate 200, the mold 250, and the projections 255 are any othersuitable shape.

FIG. 2C is a perspective view of the substrate 200 and the mold 250 inFIGS. 2A and 2B. As shown by the dashed double arrows, the mold 250 ispunched into the substrate 200. In particular, the projections 255 ofthe mold 250 punch through the bottom of the substrate 200, whichdisplaces portions of the substrate 200 to define and form the cavities,which are described below. The material from the displaced portions ofthe substrate 200 either moves to other portions of the substrate 200 tocreate relatively denser areas in those other portions or moves to otherportions of the substrate 200 by forcing out yet other portions of thesubstrate 200, which may then be removed by cutting or another suitableprocess. For example, a solid, uniform press plate (e.g., metallicplate) may be applied to the top side 210 of the substrate concurrentwith the punching via mold 250, and such would allow excess material toexit one or more side of the substrate external to the surfaces of thepress plate and mold. Additionally, one or more side supports or forms(e.g., metallic rails) may be used in conjunction with the press plateto provide support, resistance, or define flow pathways for the sides ofthe substrate material during the punching. For example, a combinationof a metallic press plate and metallic side rails may form a metallichousing corresponding in size and shape to the substrate which may beapplied to the top and sides of the substrate while the substrate isbeing punched from the bottom surface. Alternatively, hot embossing orback substrate etching is used to form the cavities in the substrate.Because the molding step affects only the bottom of the substrate 200while avoiding the use of etchants at the end of fabrication, the topside 210 of the substrate remains substantially uniform, continuous,flat, and defect free in order to provide for fabrication of theadditional circuitry.

Optionally, after the molding in FIG. 2C, the substrate 200 may undergoa setting process. The setting process may comprise heating, ultravioletexposure, cross-linking, or another suitable process. The settingprocess may ensure that the substrate 200 is able to maintain itsstructure after the molding (e.g., the cavities remain about constant insize and shape and the substrate material does not creep or otherwisereturn to its original, non-punched form).

FIG. 3A is a side view of a molded substrate 300 after the molding inFIG. 2C. The molded substrate 300 comprises anchors 310, pre-cantilevers320, and cavities 330. The anchors 310 provide support for thecantilevers and provide gaps for the cantilevers to move up and down.The anchors 310 are similar to the anchors 110 in FIGS. 1A and 1B. Thepre-cantilevers 320 become the cantilevers after further fabricationdescribed below. The cavities 330 correspond to the displaced portionsof the substrate 200 due to the projections 255 of the mold 250 asdescribed above with respect to FIG. 2C. In particular, the cavities 330have heights 340 corresponding to the heights 260 of the projections255. The heights 340 are suitable for the cantilever to move up and downwhile maintaining structural integrity.

FIG. 3B is a bottom view of the molded substrate 300 in FIG. 3A. FIG. 3Cis a transparent perspective view of the molded substrate 300 in FIGS.3A and 3B. FIGS. 3B and 3C highlight bottom side 350 and the cavities330 of the molded substrate 300. In particular, FIGS. 3B and 3C shownine cavities 330 in a 3×3 array. Any suitable number of cavities 330 inany suitable array design may be present in order to provide a desirednumber of cantilevers.

Following formation of the cavities 330, one or more additional layersof materials may be applied to the top surface 210 of the moldedsubstrate 300 to form a desired microelectronic device, and suchadditional layers may be formed via conventional microelectronicfabrication techniques such as photolithography.

FIG. 4A is a perspective view of a substrate system 400. The system 400comprises the molded substrate 300 after deposition of a bottomelectrode layer 405 on the top side 210 of the molded substrate 300. Thebottom electrode layer 405 comprises a material suitable for electricalconductivity and serves as bottom electrodes for the cantilevers, gatecontacts for TFTs, connectors, and contact pads, which are describedbelow.

FIG. 4B is a perspective view of the substrate system 400 in FIG. 4Aafter patterning of the bottom electrode layer 405. The patterningreveals bottom contact pads 407, bottom electrodes 410 for thecantilevers, and gate electrodes 415 for the TFTs. The bottom contactpads 407 provide electrical coupling to the bottom electrodes 410. Thebottom electrodes 410 are similar to the bottom electrodes 125 in FIGS.1A and 1B.

FIG. 4C is a perspective view of the substrate system 400 in FIG. 4Bafter deposition and patterning of a dielectric layer. The dielectriclayer comprises any suitable dielectric material. The patterning revealsgate dielectric layers 420 for the TFTs that are on top of the gateelectrodes 415.

FIG. 4D is a perspective view of the substrate system 400 in FIG. 4Cafter deposition of a piezoelectric layer 425 on the top side 210 of themolded substrate 300. The piezoelectric layer 425 is also deposited ontop of the bottom electrodes 410 and the gate dielectric layers 420. Thepiezoelectric layer 425 is similar to the piezoelectric layer 130 inFIGS. 1A and 1B. The piezoelectric layer 425 comprises any suitableorganic piezoelectric material, provides active components for thecantilevers, and extends gate stacks for the TFTs. The piezoelectriclayer 425 may also function as a dielectric layer. Thus, the dielectriclayer described with respect to FIG. 4C, which results in the gatedielectric layers 420, may be omitted.

FIG. 4E is a perspective view of the substrate system 400 in FIG. 4Dafter deposition of a semiconductor layer 430 on top of thepiezoelectric layer 425. The semiconductor layer 430 comprises anysuitable semiconductor material such as silicon (Si), germanium (Ge),gallium arsenide (GaAs), zinc oxide (ZnO), indium- and gallium-dopedzinc oxide (IGZO), or amorphous silicon (a-Si). The semiconductor layer430 provides the active layers of the TFTs.

FIG. 4F is a perspective view of the substrate system 400 in FIG. 4Eafter patterning of the semiconductor layer 430. The patterning removesthe semiconductor layer 430, except for on top of the piezoelectriclayer 425 residing on top of the gate dielectric layers 420, to revealTFT semiconductor layers 435. The piezoelectric layer 425 remains on topof the rest of the system 400.

FIG. 4G is a perspective view of the substrate system 400 in FIG. 4Fafter deposition of a top electrode layer 440 on top of thepiezoelectric layer 425 and the TFT semiconductor layers 435. The topelectrode layer 440 comprises a material suitable for electricalconductivity.

FIG. 4H is a perspective view of the substrate system 400 in FIG. 4Gafter patterning of the top electrode layer 440. The patterning revealsthe TFT semiconductor layers 435, top electrodes 445 for thecantilevers, connectors 450, source electrodes 455 for the TFTs, drainelectrodes 460 for the TFTs, and top contact pads 465. The topelectrodes 445 are similar to the top electrodes 135 in FIGS. 1A and 1B.The top contact pads 465 provide electrical coupling to the topelectrodes 445.

The steps above describe TFTs with gate electrodes 415 in a bottomconfiguration. Specifically, above the gate electrodes 415 are, inorder, the gate dielectric layers 420, the piezoelectric layer 425, andthe TFT semiconductor layers 435. Alternatively, the TFTs have gateelectrodes 415 in a top configuration. Specifically, the sourceelectrodes 455 and the drain electrodes 460 are formed along with thebottom electrodes 410. Above the bottom electrodes 410 are, in order,the semiconductor layers 435, the gate dielectric layers 420, thepiezoelectric layer 425, and the gate electrodes 415. The gateelectrodes 415 are patterned at the same time as the top electrodes 445.

FIG. 4I is a perspective view of the substrate system 400 in FIG. 4Hafter etching or removal of the piezoelectric layer 425. The etching orremoval reveals the bottom contact pads 407, which provide access to thebottom electrodes 410 through electrical coupling. The etching orremoval also reveals the molded substrate 300 around the bottom contactpads 407.

The above sub-steps described with respect to FIGS. 4A-4I use anysuitable photolithographic methods to perform deposition and patterning.As shown, layers are first deposited. The layers are then then patternedby selective removal. Alternatively, the layers are selectivelydeposited without further patterning. Combinations of those processesmay also be used. In addition, the above sub-steps demonstratedeposition and patterning of TFTs. Any suitable additional circuitry maybe deposited and patterned in a similar manner to yield any desiredmicroelectronic device having one or more cavities or void spacestherein.

FIG. 5A is a side view of the substrate system 400 in FIG. 4I. FIG. 5Ahighlights the anchors 310, the pre-cantilevers 320, the cavities 330,and active layers 510. The active layers 510 comprise the bottomelectrodes 410, the piezoelectric layer 425, and the top electrodes 445.The active layers 510 sit on top of their respective pre-cantilevers320.

FIG. 5B is a transparent top view of the substrate system 400 in FIG.5A. FIG. 5B highlights the cavities 330, the piezoelectric layer 425,and the active layers 510. As shown, the cavities 330 provide open areasabove, below, and to the side of the pre-cantilevers 320, that is thedimensions of the cavities 330 are greater than those of thepre-cantilevers 320, thereby providing space for cutting as describedherein to form the free cantilevers.

FIG. 5C is a transparent perspective view of the substrate system 400 inFIGS. 5A and 5B. FIG. 5C highlights the molded substrate 300, thecavities 330, and the active layers 510.

FIG. 6A is a side view of a cutter 600 and the substrate system 400 inFIGS. 5A-5C. The anchors 310, the pre-cantilevers 320, the cavities 330,and the active layers 510 are shown in the system 400. The cutter 600may also be referred to as a stamp. The cutter 600 comprises a base 610and projections 620. The base 610 has a rigidity suitable for supportingthe projections 620 and a stamping process. The projections 620 comprisesharp edges suitable for the stamping process. The cutter 600 furthercomprises metal or other suitable materials. For instance, the cutter600 may be stainless steel. The cutter 600 may be substantially the sameshape and size of the system 400.

FIG. 6B is a transparent top view of the cutter 600 and the substratesystem 400 in FIG. 6A. FIG. 6C is a transparent bottom view of thecutter 600 and the substrate system 400 in FIGS. 6A and 6B. As shown inFIG. 6C, the projections 620 of the cutter 600 are u-shaped in order todefine u-shaped recess areas, which are described below. The u-shape ofthe projections 620 have a pair of longitudinal cutting surfaces (e.g.,blades) running parallel to the sides of the cantilever arm and an endcutting surface (e.g., blade) running parallel to the end of thecantilever arm opposite the anchor. The u-shaped projections 620 aresized and shaped complimentary to the projections 255 of the punch suchthat the u-shaped projections extend into the cavities 330 of the moldedsubstrate in a male-female cooperative arrangement. Alternatively, theprojections 620 and the recess areas are any other suitable shape. Asshown by the dashed double arrows in both FIG. 6B and 6C, the cutter 600is stamped onto the system 400. In particular, the projections 620 cutthrough the top of the system 400. During cutting, material may besevered or otherwise displaced over portions of the system 400, forexample by pushing those portions (e.g., cuttings or trimmings) throughthe bottom of the system 400.

FIG. 7A is a side view of a schematic diagram of a stamped substratesystem 700 after the stamping in FIGS. 6B and 6C. The system 700comprises the anchors 310, the cavities 330, and the active layers 510.In addition, as a result of the stamping, the system 700 comprisescantilevers 710 and recess areas 720. The cantilevers 710 and the recessareas 720 are formed from the cutter 600 cutting around thepre-cantilevers 320. Specifically, the cutter 600 cuts thepre-cantilevers 320 apart from each other laterally across the page andcuts the pre-cantilevers 320 from the molded substrate 300 laterallyinto and out of the page, thus releasing the pre-cantilevers 320 fromeach other and the molded substrate 300 and thus forming the cantilevers710 and the recess areas 720. Bottom surfaces of the cantilevers 710substantially define the cavities 330, and front, left side, and rightside surfaces of the cantilevers 710 substantially define the recessareas 720. The active layers 510 partially sit on top of theirrespective anchors 310 and substantially sit on top of their respectivecantilevers 710.

Though the anchors 310 and the cantilevers 710 are shown as separatecomponents, they are part of the same original substrate 200. Inaddition, the anchors 310 are attached to a base 715 of the substrate200. Thus, the above techniques allow for the base 715, the anchors 310,and the cantilevers 710 to be formed from a single substrate.

FIG. 7B is a top view of a schematic diagram of the stamped substratesystem 700 in FIG. 7A. FIG. 7B highlights the recess areas 720.Specifically, the recess areas 720 comprise portions above, below, andto the right of the active layers 510 and thus the cantilevers 710.

FIG. 7C is a perspective view of a schematic diagram of the stampedsubstrate system 700 in FIGS. 7A and 7B. FIG. 7C highlights the recessareas 720, which provide u-shapes around the active layers 510, whichare on top of the cantilevers 710. FIG. 7C also highlights the cavities330 underneath the cantilevers 710.

The cantilevers 710 are shown in a 3×3 array. Any desired array may bechosen in advance. For instance, each cantilever 710 may correspond toan alpha-numeric key on a smartphone touchscreen. Alternatively, alarger array may first be fabricated, then the cantilevers 710 may becut apart into individual cantilevers 710 or a smaller array. Thecantilevers 710 may be in the micrometer to millimeter range. Forinstance, the cantilevers 710 may be about 500 μm long, about 1 mm long,or about 5 mm long. The disclosed technique may provide for shorterlengths as well.

The cantilevers 710 and the active layers 510 together formpiezoelectric cantilever actuators. The actuators may perform twofunctions. First, a voltage may be applied to the bottom electrodes 410and the top electrodes 445 to cause the cantilevers 710 to move up, movedown, or vibrate. Thus, the actuators may provide feedback such ashaptic feedback on a touchscreen on a computing device such as a laptop,tablet, mobile phone, etc. (e.g., providing a user with a sense ofphysically touching digitally displaced keys on a touchscreen). Second,mechanical forces may be applied to the cantilevers 710. Thepiezoelectric layer 425 converts those mechanical forces to electriccharges, which shift threshold voltages of the TFTs so that the TFTsdetect the electric charges. Thus, the actuators may provide sensing touser input via touch (e.g., a touchscreen on a computing device such asa laptop, tablet, mobile phone, etc.).

FIG. 8 is a flowchart of a method 800 for fabricating a system. At step810, a substrate comprising a first bottom surface is provided. Forinstance, the substrate is the substrate 200. At step 820, a moldcomprising a first top surface with first projections is provided. Forinstance, the mold is the mold 250 comprising the projections 255. Atstep 830, the projections are punched through the first bottom surfaceto define anchors, pre-cantilevers, and cavities in the substrate. Forinstance, the anchors are the anchors 310, the pre-cantilevers are thepre-cantilevers 320, and the cavities are the cavities 330.

Step 840 is optional so that the method 800 may proceed to step 850without performing step 840. At step 840, additional circuitry isfabricated on top of the pre-cantilevers after the providing thesubstrate, the providing the mold, and the punching. For instance, theadditional circuitry, including the TFTs described in FIGS. 4A-5C, isfabricated on top of the pre-cantilevers 320 after steps 810-830. TheTFTs may comprise the bottom electrode layer 405, the gate dielectriclayer 420, the piezoelectric layer 425, the TFT semiconductor layers435, and the top electrode layer 440. In one or more alternativeembodiments, the substrate may be modified to contain additionalmaterial, circuitry, or the like prior to steps 810-830, that is apre-modified substrate may be molded and cavities formed therein, andthe method may resume at optional step 840 to provide further additionalmaterial and/or circuitry.

At step 850, a cutter with a second bottom surface with secondprojections is provided. For instance, the cutter is the cutter 600comprising the projections 620. Finally, at step 860, a second topsurface of the substrate is stamped to release the pre-cantilevers anddefine cantilevers and recess areas. For instance, the substrate is thesubstrate system 400, the pre-cantilevers are the pre-cantilevers 320,the cantilevers are the cantilevers 710, and the recess areas are therecess areas 720. In one or more alternative embodiments, the substratemay be modified to contain additional material, circuitry, or the likesubsequent to steps 810-860, that is a molded, cut substrate (therebydefining one or more cavities or void spaces in a microelectronicdevice) may be further modified via additional microelectronicsfabrication techniques (for example, incorporated into a displaytouchscreen on a computing device such as a laptop, tablet, mobilephone, etc.).

For the purpose of any U.S. national stage filing from this application,all publications and patents mentioned in this disclosure areincorporated herein by reference in their entireties, for the purpose ofdescribing and disclosing the constructs and methodologies described inthose publications, which might be used in connection with the methodsof this disclosure. Any publications and patents discussed herein areprovided solely for their disclosure prior to the filing date of thepresent application. Nothing herein is to be construed as an admissionthat the inventors are not entitled to antedate such disclosure byvirtue of prior invention.

In any application before the United States Patent and Trademark Office,the Abstract of this application is provided for the purpose ofsatisfying the requirements of 37 C.F.R. §1.72 and the purpose stated in37 C.F.R. §1.72(b) “to enable the United States Patent and TrademarkOffice and the public generally to determine quickly from a cursoryinspection the nature and gist of the technical disclosure.” Therefore,the Abstract of this application is not intended to be used to construethe scope of the claims or to limit the scope of the subject matter thatis disclosed herein. Moreover, any headings that can be employed hereinare also not intended to be used to construe the scope of the claims orto limit the scope of the subject matter that is disclosed herein. Anyuse of the past tense to describe an example otherwise indicated asconstructive or prophetic is not intended to reflect that theconstructive or prophetic example has actually been carried out.

The present disclosure is further illustrated by the following examples,which are not to be construed in any way as imposing limitations uponthe scope thereof. On the contrary, it is to be clearly understood thatresort can be had to various other aspects, embodiments, modifications,and equivalents thereof which, after reading the description herein, canbe suggest to one of ordinary skill in the art without departing fromthe spirit of the present invention or the scope of the appended claims.

ADDITIONAL DISCLOSURE

A first embodiment, which is a method of fabricating a microelectronicdevice comprising:

-   -   providing a substrate comprising a first bottom surface;    -   providing a mold comprising a first top surface with first        projections; and    -   punching the first projections through the first bottom surface        to define anchors, pre-cantilevers, and cavities in the        substrate.

A second embodiment, which is the method of the first embodiment,further comprising:

-   -   providing a cutter with a second bottom surface with second        projections; and    -   stamping a second top surface of the substrate to release the        pre-cantilevers and define cantilevers and recess areas.

A third embodiment, which is the method of any one of the first throughthe second embodiments, further comprising fabricating additionalcircuitry on top of the pre-cantilevers after the providing thesubstrate, the providing the mold, and the punching.

A fourth embodiment, which is the method of the third embodiment,wherein the fabricating comprises:

-   -   depositing a bottom electrode layer; and    -   patterning the bottom electrode layer to define bottom contact        pads and bottom electrodes corresponding to the pre-cantilevers.

A fifth embodiment, which is the method of the fourth embodiment,wherein the fabricating further comprises depositing gate dielectriclayers.

A sixth embodiment, which is the method of the fifth embodiment, whereinthe fabricating further comprises depositing a piezoelectric layer ontop of the bottom contact pads, the bottom electrodes, and the gatedielectric layers for thin-film transistors (TFTs).

A seventh embodiment, which is the method of the sixth embodiment,wherein the fabricating further comprises:

-   -   depositing a semiconductor layer on top of the piezoelectric        layer; and    -   patterning the semiconductor layer to define semiconductor        layers for the TFTs.

An eighth embodiment, which is the method of the seventh embodiment,wherein the fabricating further comprises:

-   -   depositing a top electrode layer; and    -   patterning the top electrode layer to define top electrodes,        connectors, source electrodes for the TFTs, drain electrodes for        the TFTs, and top contact pads.

A ninth embodiment, which is the method of the eighth embodiment,wherein the fabricating further comprises removal of the piezoelectriclayer to reveal the bottom contact pads.

A tenth embodiment, which is a piezoelectric cantilever actuator systemarray prepared by a process comprising the steps of:

-   -   providing a substrate comprising a first bottom surface;    -   providing a mold comprising a first top surface with first        projections; and    -   punching the first projections through the first bottom surface        to define anchors, pre-cantilevers, and cavities in the        substrate.

An eleventh embodiment, which is the system of the tenth embodiment,wherein the process further comprises the steps of:

-   -   providing a cutter with a second bottom surface with second        projections; and    -   stamping a second top surface of the substrate to release the        pre-cantilevers and define cantilevers and recess areas.

A twelfth embodiment, which is the system of any one of the tenththrough the eleventh embodiments, wherein the process further comprisesthe step of fabricating additional circuitry on top of thepre-cantilevers after the providing the substrate, the providing themold, and the punching.

A thirteenth embodiment, which is the system of the twelfth embodiment,wherein the fabricating comprises:

-   -   depositing a bottom electrode layer;    -   patterning the bottom electrode layer to define bottom contact        pads and bottom electrodes corresponding to the pre-cantilevers;    -   depositing gate dielectric layers; and    -   depositing a piezoelectric layer on top of the bottom contact        pads, the bottom electrodes, and the gate dielectric layers for        thin-film transistors (TFTs).

A fourteenth embodiment, which is the system of the thirteenthembodiment, wherein the fabricating further comprises:

-   -   depositing a semiconductor layer on top of the piezoelectric        layer;    -   patterning the semiconductor layer to define semiconductor        layers for the TFTs;    -   depositing a top electrode layer; and    -   patterning the top electrode layer to define top electrodes,        connectors, source electrodes for the TFTs, drain electrodes for        the TFTs, and top contact pads.

A fifteenth embodiment, which is the system of the fourteenthembodiment, wherein the fabricating further comprises removal of thepiezoelectric layer reveal the bottom contact pads.

A sixteenth embodiment, which is a microelectronic device comprising:

-   -   a base;    -   a first anchor coupled to the base; and    -   a first cantilever coupled to the first anchor, wherein the        base, the first anchor, and the first cantilever are an integral        structure formed from the same substrate material.

A seventeenth embodiment, which is the device of the sixteenthembodiment, further comprising:

-   -   a first cavity coupled to the first anchor and the first        cantilever; and    -   a first recess area coupled to the first cantilever and the        first cavity.

An eighteenth embodiment, which is the device of the seventeenthembodiment, wherein the first cantilever comprises:

-   -   a first bottom surface substantially defining the first cavity;    -   a first front surface;    -   a first left surface; and    -   a first right surface, wherein the first front surface, the        first left surface, and the first right surface substantially        define the first recess area.

A nineteenth embodiment, which is the device of the eighteenthembodiment, further comprising:

-   -   a second anchor coupled to the base and the first recess area;    -   a second cantilever coupled to the first anchor;    -   a second cavity coupled to the second anchor and the second        cantilever; and    -   a second recess area coupled to the second cantilever and the        second cavity.

A twentieth embodiment, which is the device of any one of the sixteenththrough the nineteenth embodiments, further comprising active layerscoupled to the first anchor and the first cantilever, configured to forma piezoelectric cantilever actuator with the first cantilever, andcomprising:

-   -   a bottom electrode;    -   a piezoelectric layer on top of the bottom electrode; and    -   a top electrode on top of the piezoelectric layer.

A twenty first embodiment, which is a method of fabricating amicroelectronic device having one or more void spaces, comprising:

-   -   forming a cavity in a plastically deformable substrate material        of the microelectronic device, wherein the substrate has an        about uniform upper surface after formation of the cavity, the        cavity projects upward into the substrate material from a lower        surface of the substrate, and the cavity provides the one or        more void spaces in the microelectronics device.

A twenty second embodiment, which is the method of the twenty firstembodiment, wherein the microelectronic device is a piezoelectriccantilever actuator.

A twenty third embodiment, which is the method of any one of the twentyfirst through the twenty-second embodiments, wherein the deformablesubstrate material is a plastic or polymeric material that undergoesplastic deformation.

A twenty fourth embodiment, which is the method of any one of the twentyfirst through the twenty third embodiments, further comprisingdepositing one or more layers of material onto the upper surface of thesubstrate material to form the microelectronic device, wherein thedepositing may occur prior to forming the cavity, after forming thecavity, or both.

A twenty fifth embodiment, which is the method of the twenty fourthembodiment, further comprising cutting from the one or more layers ofmaterials downward through the substrate material.

A twenty sixth embodiment, which is the method of the twenty fifthembodiment, wherein forming the cavity further comprises pressing a moldhaving one or more projections into the lower surface of the substrate,wherein the projections correspond to the size and shape of the cavity.

A twenty seventh embodiment, which is the method of the twenty sixthembodiment, wherein the cutting further comprises pressing a stamphaving cutting blades into the one or more layers of materials downwardthrough the substrate material, wherein the cutting blades correspond tothe size and shape of the projections.

A twenty eighth embodiment, which is the method of the twenty seventhembodiment, wherein the projections and the cutting blades interfacewith respect to the substrate in a complimentary, male-femalerelationship to form the microelectronic device having the one or morevoid spaces.

While embodiments of the disclosure have been shown and described,modifications thereof can be made without departing from the spirit andteachings of the invention. The embodiments and examples describedherein are exemplary only, and are not intended to be limiting. Manyvariations and modifications of the invention disclosed herein arepossible and are within the scope of the invention.

Accordingly, the scope of protection is not limited by the descriptionset out above but is only limited by the claims which follow, that scopeincluding all equivalents of the subject matter of the claims. Each andevery claim is incorporated into the specification as an embodiment ofthe present invention. Thus, the claims are a further description andare an addition to the detailed description of the present invention.The disclosures of all patents, patent applications, and publicationscited herein are hereby incorporated by reference.

What is claimed is:
 1. A method of fabricating a microelectronic devicecomprising: providing a substrate comprising a first bottom surface;providing a mold comprising a first top surface with first projections;and punching the first projections through the first bottom surface todefine anchors, pre-cantilevers, and cavities in the substrate.
 2. Themethod of claim 1, further comprising: providing a cutter with a secondbottom surface with second projections; and stamping a second topsurface of the substrate to release the pre-cantilevers and definecantilevers and recess areas.
 3. The method of claim 1, furthercomprising fabricating additional circuitry on top of thepre-cantilevers after the providing the substrate, the providing themold, and the punching.
 4. The method of claim 3, wherein thefabricating comprises: depositing a bottom electrode layer; andpatterning the bottom electrode layer to define bottom contact pads andbottom electrodes corresponding to the pre-cantilevers.
 5. The method ofclaim 4, wherein the fabricating further comprises depositing gatedielectric layers.
 6. The method of claim 5, wherein the fabricatingfurther comprises depositing a piezoelectric layer on top of the bottomcontact pads, the bottom electrodes, and the gate dielectric layers forthin-film transistors (TFTs).
 7. The method of claim 6, wherein thefabricating further comprises: depositing a semiconductor layer on topof the piezoelectric layer; and patterning the semiconductor layer todefine semiconductor layers for the TFTs.
 8. The method of claim 7,wherein the fabricating further comprises: depositing a top electrodelayer; and patterning the top electrode layer to define top electrodes,connectors, source electrodes for the TFTs, drain electrodes for theTFTs, and top contact pads.
 9. The method of claim 8, wherein thefabricating further comprises removal of the piezoelectric layer toreveal the bottom contact pads.
 10. A piezoelectric cantilever actuatorsystem array prepared by a process comprising the steps of: providing asubstrate comprising a first bottom surface; providing a mold comprisinga first top surface with first projections; and punching the firstprojections through the first bottom surface to define anchors,pre-cantilevers, and cavities in the substrate.
 11. The system of claim10, wherein the process further comprises the steps of: providing acutter with a second bottom surface with second projections; andstamping a second top surface of the substrate to release thepre-cantilevers and define cantilevers and recess areas.
 12. The systemof claim 10, wherein the process further comprises the step offabricating additional circuitry on top of the pre-cantilevers after theproviding the substrate, the providing the mold, and the punching. 13.The system of claim 12, wherein the fabricating comprises: depositing abottom electrode layer; patterning the bottom electrode layer to definebottom contact pads and bottom electrodes corresponding to thepre-cantilevers; depositing gate dielectric layers; and depositing apiezoelectric layer on top of the bottom contact pads, the bottomelectrodes, and the gate dielectric layers for thin-film transistors(TFTs).
 14. The system of claim 13, wherein the fabricating furthercomprises: depositing a semiconductor layer on top of the piezoelectriclayer; patterning the semiconductor layer to define semiconductor layersfor the TFTs; depositing a top electrode layer; and patterning the topelectrode layer to define top electrodes, connectors, source electrodesfor the TFTs, drain electrodes for the TFTs, and top contact pads. 15.The system of claim 14, wherein the fabricating further comprisesremoval of the piezoelectric layer reveal the bottom contact pads.
 16. Amicroelectronic device comprising: a base; a first anchor coupled to thebase; and a first cantilever coupled to the first anchor, wherein thebase, the first anchor, and the first cantilever are an integralstructure formed from the same substrate material.
 17. The device ofclaim 16, further comprising: a first cavity coupled to the first anchorand the first cantilever; and a first recess area coupled to the firstcantilever and the first cavity.
 18. The device of claim 17, wherein thefirst cantilever comprises: a first bottom surface substantiallydefining the first cavity; a first front surface; a first left surface;and a first right surface, wherein the first front surface, the firstleft surface, and the first right surface substantially define the firstrecess area.
 19. The device of claim 18, further comprising: a secondanchor coupled to the base and the first recess area; a secondcantilever coupled to the first anchor; a second cavity coupled to thesecond anchor and the second cantilever; and a second recess areacoupled to the second cantilever and the second cavity.
 20. The deviceof claim 16, further comprising active layers coupled to the firstanchor and the first cantilever, configured to form a piezoelectriccantilever actuator with the first cantilever, and comprising: a bottomelectrode; a piezoelectric layer on top of the bottom electrode; and atop electrode on top of the piezoelectric layer.